During normal operation, the substrate of a P-channel enhanced MOS transistor must be connected to the source, and the voltage Vds at the drain center should be negative to ensure that the PN junction between the two P regions and the substrate is reverse biased. At the same time, in order to form a conductive channel near the top surface of the substrate, the voltage Vgs between the gate and the source should also be negative.
In the field of electronic applications, it is essential to protect against electrostatic discharge, transient voltage, EFT, and surge voltage immunity to ensure the safety and reliability of electronic circuits. In the field of protection, there are two types of protective components.
It is a product that replaces voltage stabilizing electronic diodes and is made into a diffusion type or alloy type of silicon. It is a diode with a sudden change in reverse breakdown characteristic curve and is used as a control voltage and standard voltage
Set the multimeter to the R × 1k position and measure the forward and reverse resistance between A-GA, GA-GK, and GK - respectively.
The average rated on state current IT is the average value of a 50 Hz sine half wave current that can continuously pass between the anode and cathode under certain conditions.
Repetitive peak voltage in both forward and reverse directions - rated voltage (VDRM, VRRM, whichever is smaller).
